Julian Stangl, ao.Univ.Prof. Dr.

Associate Professor

X-ray group

Room 014
Phone: +43/(0)732/2468-9604
E-mail: julian.stangl(at)jku.at

Photo

Personal information:
Date and place of birth: 21.07.1971, Braunau

Academic career:
1990 - 1996
Study of physics, Univ. of Linz
1996 - 2000
Ph.D. thesis
"High-resolution X-ray Diffraction Studies of Self-organized SiGe(C) Islands"
2000 - 2001
Post-doctoral researcher, Institute of Semiconductor Physics, Linz
2001-2006
University Assistant, Institute of Semiconductor Physics, Linz
Habilitation "Untersuchung von Halbleiternanostrukturen mit Röntgenstreuverfahren" (Investigation of Semiconductor Nanostructures Using X-Ray Scattering Mehtods)
since 2006
Ass. Prof., Institute of Semiconductor Physics, Linz

Research interests:
Structural investigation of semiconductor heterostructures, especially self-organized nanostructures, using various x-ray scattering techniques.

Other interests:
Music (passive), Photography, Sports in reasonable amounts

Selected talks & publications:
Invited conference talks

  • J. Stangl, Investigation of semiconductor nanostructures by x-ray diffraction: beyond the ensemble average, ISCS conference, Takamatsu, Japan, 2 June 2010.

  • J. Stangl, Quantum dots: fabrication and characterization techniques, CMOS Emerging Technologies conference, Whistler, Canada, 20 May 2010.

  • J. Stangl, Investigation of semiconductor nanostructures using focused x-rays, ESRF User Meeting, Grenoble. France, 4 February, 2009.

  • J. Stangl, X-ray diffraction of single quantum dots with nano beams, E-MRS Spring Meeting, Strasbourg, France, 11 June 2009.

  • J. Stangl, C. Mocuta, K. Mundboth, A. Diaz, T.H. Metzger, G. Bauer, A.V. Zozulya, O. M. Yefanov, I. Vartanyants, X-ray diffarction from semiconductor nanostructures: beyond the ensemble average, IUMRS-ICEM 2008 Sydney, Australia, 31.07.2008.

  • J. Stangl, B. Mandl, E. Wintersberger, R. T. Lechner, C. Mocuta, W. Seifert, G. Bauer, X-ray diffraction from semiconductor nanostructures, 9th International Conference on X-ray and Neutron Scattering (SXNS 9), Taipei, Taiwan, 16.-20. 07. 2006.

  • J. Stangl, B. Mandl, E. Wintersberger, R. T. Lechner, W. Seifert, G. Bauer, Structure of single InAs nanowires from x-ray diffraction, 8th Biennial Conference on High Resolution X-Ray Diffraction and Imaging (XTOP 2006), Karlsruhe/Baden-Baden, Germany,19-22 September 2006.

  • J. Stangl, X-Ray Diffraction From Semiconductor Nanostructures, XX Congress of the International Union of Crystallography (IUCR 2005), Florence, Italy, 29.08.2005.

invited seminar & workshop talks

  • J. Stangl, A reciprocal space view on semiconductor nanowires, Colloquium talk, Scuola Normale Superiore Pisa, Italy, 21 April 2010.

  • J. Stangl, Investigation of semiconductor nanowires using x-ray diffraction, Colloquium talk, Lund University, Sweden, 4 May 2009.

  • J. Stangl, An example of nanoscience with x-rays: from ensemble average to single object properties, Hercules Specialized Course: synchrotron radiation techniques contribution to nanoscience, ESRF Grenoble, France, 21.May 2009.

  • J. Stangl, Investigating semiconductor nanostructures using focused hard x-ray beams, MAXLab Symposium, Universität Lund, Sweden, 15. Dezember 2009.

  • J. Stangl, Investigation of semiconductor nanostructures by x-ray scattering methods, DESY research course New Materials in New Light, Hamburg, 06.03.2008.

  • J. Stangl, Structural properties of self-organized semiconductor nanostructures, Inauguration Colloquium of the Karlsruhe Micro and Nano Facility, Forschungszentrum Karlsruhe, 14.11.2008.

  • J. Stangl, X-ray analysis of semiconductor nanostructures: beyond the ensemble average, Workshop "SanCharMod", Paris, Frankreich, 12./13. Dezember 2007.

  • J. Stangl, Surface diffraction, NESY Winterschule Planneralm, Donnersbach, Austria, 05.-09. März 2007.

  • 10. J. Stangl, X-ray Investigation of Self-Assembled Nanostructures, Workshop "Characterization and Modelling of Self-assembled Semiconductor Nanostructures", TU Eindhoven, Netherlands, 24.11.2005.
publications

  • Hrauda N., J. Zhang, E. Wintersberger, T. Etzelstorfer, B. Mandl, J. Stangl, D. Carbone, V. Holý, V. Jovanovi?, C. Biasotto, L.K. Nanver, J. Moers, D. Grützmacher and G. Bauer, "X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor", Nano Letters 11, 2875-2880 (2011). DOI:10.1021/nl2013289

  • D. Kriegner, C. Panse, B. Mandl, K. A. Dick, M. Keplinger, J. M. Persson, P. Caroff, D. Ercolani, L. Sorba, F. Bechstedt, J. Stangl, G. Bauer, "Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires", Nano Letters 11, 1483-1489 (2011).

  • B. Mandl, K. A. Dick, D. Kriegner, M. Keplinger, G. Bauer, J. Stangl, and K. Deppert," Crystal structure control in Au-free self-seeded InSb wire growth", Nanotechnology 22, 145603 (2011).

  • C. Gusenbauer, T. Ashraf, J. Stangl, G. Hesser, T. Plach, A. Meingast, G. Kothleitner, R. Koch, 2Interdiffusion in Heusler film epitaxy on GaAs(001), Phys. Rev. B 83, 035319 (2011).

  • V. Chamard, J. Stangl, D. Carbone, A. Diaz, G. Chen, C. Alfonso, C. Mocuta, T.H. Metzger, "Three-dimensional X-Ray Fourier Transform Holography: the Bragg case", Phys. Rev. Lett. 104, 165501 (2010), DOI:10.1103/PhysRevLett.104.16550

  • R.T. Lechner, G. Springholz, M. Hassan, H. Groiss, R. Kirchschlager, J. Stangl, N. Hrauda, G. Bauer, "Phase separation and exchange biasing in the ferromagnetic IV-VI semiconductor Ge1-xMnxTe", Appl. Phys. Lett. 97, 023101 (2010).

  • G. Chen, E. Wintersberger, G. Vastola, H. Groiss, J. Stangl, W. Jantsch, F. Schäffler, "Self-assembled Si0.80Ge0.20 nanoripples on Si(1 1 10) substrates", Appl. Phys. Lett. 96, 103107 (2010).

  • J. Zhang, F. Montalenti, A. Rastelli, Nina Hrauda, D. Scopece, H. Groiss, J. Stangl, F. Pezzoli, F. Schäffler, O.G. Schmidt, L. Miglio, G. Bauer, "Collective shape oscillations of SiGe islands on pit-patterned Si(001) substrates: a coherent-growth strategy enabled by self-regulated intermixing", Phys. Rev. Lett. 105, 166102 (2010).

  • J. Zhang, N. Hrauda, H. Groiss, A. Rastelli, J. Stangl, F. Schäffler, O.G. Schmidt, G. Bauer, "Strain engineering in Si via closely stacked, site-controlled SiGe islands", Appl. Phys. Lett. 96, 193101 (2010).

  • T. Ashraf, C. Gusenbauer, J. Stangl, G. Hesser, M. Wegscheider, R. Koch, "Stress and interdiffusion during molecular beam epitaxy of Fe on As-rich GaAs(001)", J. Phys.: Condens. Matter 23, 042001 (2010).

  • B. Mandl, J. Stangl, E. Hilner, A.A. Zakharov, K. Hillerich, A.W. Dey, L. Samuelson, G. Bauer, K. Deppert, A. Mikkelsen, "Growth Mechanism of Self-Catalyzed Group III/V Nanowires", Nano Letters 10, 4443-4449 (2010).

  • E. Wintersberger, N. Hrauda, D. Kriegner, M. Keplinger, G. Springholz, J. Stangl, G. Bauer, J. Oswald, T. Belytschko, C. Deiter, F. Bertram, O.H. Seeck, "Analysis of periodic dislocation networks using x-ray diffraction and extended finite element modelling", Appl. Phys. Lett. 96, 131905 (2010).

  • J. Stangl, C. Mocuta, A. Diaz, T.H. Metzger, G. Bauer, "X-ray diffraction as a local probe tool", ChemPhysChem 10, 2923-2930 (2009).

  • M. Keplinger, T. Mårtensson, J. Stangl, E. Wintersberger,, B. Mandl, D. Kriegner, V. Holý, G. Bauer, K. Deppert, L. Samuelson, "Structural investigations of core-shell nanowires using grazing incidence x-ray diffraction", Nano Letters 9, 1877-1882 (2009).

  • A. Diaz, C. Mocuta, J. Stangl, B. Mandl, C. David, J. Vila-Comamala, V. Chamard, T.H. Metzger, G. Bauer, "Coherent x-ray diffraction imaging of a single epitaxial InAs nanowire", Phys. Rev B 79, 125324 (2009).
    also featured in: Virtual Journal of Nanoscale Science & Technology, April 13, 2009 (http://www.vjnano.org/).

  • V. Holý, J. Stangl, T. Fromherz, R.T. Lechner, E. Wintersberger, G. Bauer, C. Dais, E. Müller, D. Grützmacher, "X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal", Phys. Rev. B 79, 035324 (2009).
    also featured in: Virtual Journal of Nanoscale Science & Technology, Vol. 19(6), February 9, (2009).

  • J. Stangl, "Vermessung einzelner Nanoinseln", Physik in unserer Zeit 1/2009, 46 (2009).

  • A.V. Zozulya, O.M. Yefanov, I.A. Vartanyants, K. Mundboth, C. Mocuta, T.H. Metzger, J. Stangl, G. Bauer, T. Boeck, M. Schmidbauer, "Imaging of nanoislands in coherent grazing-incidence small-angle x-ray scattering experiments", Phys. Rev. B 78, 121304 (Rapid Comm.) (2008).
    Also published in Virtual Journal of Nanoscale Science & Technology, Oct. 6 (2008).

  • I.A. Vartanyants, A.V. Zozulya, K. Mundboth, O. M. Yefanov, M.-I. Richard, E. Wintersberger, J. Stangl, A. Diaz, C. Mocuta, T.H. Metzger, G. Bauer, T. Boeck, M. Schmidbauer, "Crystal Truncation Planes Revealed by 3D Tomography of Reciprocal Space", Phys. Rev. B 77, 115317 (2008).

  • C. Mocuta, J. Stangl, K. Mundboth, T.H. Metzger, G. Bauer, I. Vartanyants, M. Schmidbauer, T. Boeck, "Beyond the ensemble average: x-ray diffraction analysis of single SiGe islands", Phys. Rev. B 77, 245425 (2008).

  • V. Chamard, J. Stangl, S. Labat, T. H. Metzger, "Evidence of stacking fault distribution along an InAs quantum wire using micro-focussed coherent x-ray diffraction", J. Appl. Cryst. 41, 272-280 (2008).

  • D. Grützmacher, T. Fromherz, C. Dais, J. Stangl, E. Müller, Y. Ekinci, H.H. Solak, H. Sigg, R.T. Lechner, E. Wintersberger, S. Birner, Václav Holý, G. Bauer, "Three-Dimensional Si/Ge Quantum Dot Crystals", Nano Letters 7, 3150-3156 (2007).

  • Th. Mårtensson, J.B. Wagner, E. Hilner, A. Mikkelsen, C. Thelander, J. Stangl, B.J. Ohlsson, A. Gustafsson, E. Lundgren, L. Samuelson, W. Seifert, "Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings", Advanced Materials 19, 1801 (2007).

  • M. Stoffel, A. Rastelli, J. Stangl, T. Merdzhanova, G. Bauer, O.G. Schmidt, "Shape oscillations: a walk through the phase diagram of strained islands", Phys. Rev. B 75, 113307 (2007).

  • B. Mandl, J. Stangl, T. Mårtensson, A. Mikkelsen, J. Eriksson, L.S. Karlsson, G. Bauer, L. Samuelson, W. Seifert, "Au-Free Epitaxial Growth of InAs Nanowires", Nano Letters 6, 1817-1821 (2006).

  • J. Novák, V. Holý, J. Stangl, T. Fromherz, Z. Zhong, G. Chen, G. Bauer, B. Struth, "Ge/Si islands in a 3D island crystal studied by x-ray diffraction", J. Appl. Phys. 98, 073517 (2005).

  • J. Stangl, V. Holý, G. Bauer, "Structural properties of self-organized semiconductor nanostructures", Rev. Mod. Phys. 76, 725-783 (2004).

  • J. Stangl, T. Schülli, H. Metzger, G. Bauer, "Im Inneren von Halbleiternanostrukturen", Physik Journal 3, 33-39 (2004).

  • T.U. Schülli, R.T. Lechner, J. Stangl, G. Springholz, G. Bauer, S. Dhesi, P. Bencok, "Soft x-ray magnetic scattering from ordered EuSe nanoislands", Appl. Phys. Lett. 84, 2661 (2004).

  • T.U. Schülli, R.T. Lechner, J. Stangl, G. Springholz, G. Bauer, M. Sztucki, and T.H. Metzger, "Strain determination in multilayers by complementary anomalous x-ray diffraction", Phys. Rev. B 69, 195307 (2004).

  • J. Stangl, A. Hesse, V. Holy, Z. Zhong, G. Bauer, U. Denker, O. G. Schmidt, "Effect of overgrowth temperature on shape, strain and composition of buried Ge islands deduced from x-ray diffraction", Appl. Phys. Lett. 82, 2251-2253 (2003).

  • T.U. Schülli, J. Stangl, Z. Zhong, R.T. Lechner, M. Sztucki, T.H. Metzger, G. Bauer, "Direct determination of strain and composition profiles in SiGe islands by anomalous x-ray diffraction at high momentum transfer", Phys. Rev. Lett. 90, 066105-1/4 (2003).

  • Z. Zhong, J. Stangl, F. Schäffler, G. Bauer, "Evolution of shape, height, and in-plane lattice constant of Ge-rich islands during capping with Si", Appl. Phys. Lett. 83, 3695-3697 (2003).

  • A. Hesse, J. Stangl, V. Holy, T. Roch, G. Bauer, O.G. Schmidt, U. Denker, B. Struth, "Effect of overgrowth on shape, composition and strain of SiGe islands on Si(001)", Phys. Rev. B 66, 085321 (2002).

  • J. Stangl, A. Daniel, V. Holy, T. Roch, G. Bauer, I. Kegel, T.H. Metzger, T. Wiebach, O.G. Schmidt, K. Eberl, "Strain and composition distribution in free-standing SiGe islands from x-ray diffraction", Appl. Phys. Lett. 79, 1474-1476 (2001).

  • I. Kegel, T.H. Metzger, A. Lorke, J. Peisl, J. Stangl, G. Bauer, K. Nordlund, W.V. Schoenfeld, P.M. Petroff, "Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction", Phys. Rev. B 63, 035318 (2001).

  • J. Stangl, V. Holy, T. Roch, A. Daniel, G. Bauer, J. Zhu, K. Brunner, G. Abstreiter, "Grazing incidence small-angle x-ray scattering study of buried and free-standing SiGe islands in a SiGe/Si superlattice", Phys. Rev. B 62, 7229-7237 (2000).

  • J. Stangl, T. Roch, G. Bauer, I. Kegel, T.H. Metzger, O.G. Schmidt, K. Eberl, O. Kienzle, F. Ernst, "Vertical correlation of SiGe islands in SiGe/Si superlattices: x-ray diffraction versus transmission electron microscopy", Appl. Phys. Lett. 77, 3953-3955 (2000).

  • Z. Kovats, T.H. Metzger, J. Peisl, J. Stangl, M. Mühlberger, Y. Zhuang, F. Schäffler, G. Bauer, "Investigation of β-SiC precipitation in SiC epilayers by x-ray scattering at grazing incidence", Appl. Phys. Lett . 76, 3409 (2000).

  • I. Kegel, T.H. Metzger, A. Lorke, J. Peisl, J. Stangl, G. Bauer, J.M. Garcia, P.M. Petroff, "Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots", Phys. Rev. Lett . 85, 1694 (2000).

  • D. De Salvador, M. Petrovich, M. Berti, F. Romanato, E. Napolitani, A. Drigo, J. Stangl, S. Zerlauth, M. Mühlberger, F. Schäffler, G. Bauer, P.C. Kelires, "Lattice parameter of SiGeC alloys", Phys. Rev. B 61, 13005 (2000).

  • J. Stangl, V. Holy, P. Mikulik, G. Bauer, I. Kegel, T.H. Metzger, O.G. Schmidt, C. Lange, K. Eberl, "Self-assembled carbon-induced germanium quantum dots studied by grazing-incidence small-angle x-ray scattering", Appl. Phys. Lett . 74, 3785 (1999).

  • J. Stangl, S. Zerlauth, F. Schäffler, G. Bauer, M. Berti, D. de Salvador, A.V. Drigo, and F. Romanato, "Strong deviation of the lattice parameter in SiGeC Epilayers from vegard's rule", Mat. Res. Soc. Symp. Proc . 533, 257 (1998).

  • M. Berti, D. de Salvador, A.V. Drigo, R. Romanato, J. Stangl, S. Zerlauth, F. Schäffler, G. Bauer, "Lattice parameter in SiC epilayers: deviation from Vegard's rule", Appl. Phys. Lett. 72, 1602-1604 (1998).

Habilitation
Download an electronic version of my habilitation
(submitted Feb. 2006, password protected)
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Last modified: 15.03.2007 11:31:38